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Tranzistori & diode

Ordoneaza dupa:
Si-N+Di Darlington 1500V 5A 50W, hi-β ≥100, Rez. b-e 100Ω ±15, TO3PML, replacement for BU808DFI BU808DFX. Cross Reference: C5388. High performance transistor for horizontal...
10 RON
Si-N+Di 1500V 6A 50W original Toshiba equivalent: 2SC4764. Cross Reference: 3DD2499 D2499.
4 RON
Schottky Si-D 100V 5A DO201AD, equivalent: MBR5100 MBR5100RLG SB5B0 SB5100 SR5100.
1.20 RON
SI-N+Di+R Darlington 1400V 8A 62W 0, 15uS Rbe=100-115Ω, equivalent: BU808D BU808DF BU808DFI 2SD1632-Matsushita. High performance transistor for horizontal deflection output.
12 RON
Si-P 160V 1A 0, 9W 50MHz TO92S. Cross Reference: 2SA1013-O 2SA1013Y A1013-Y CS-A1013Y.
0.30 RON
Si-N+Di+R 1500V 10A 50W 0, 3uS ISOWATT-218FX. Cross Reference: 1803DFX 1803DHI MD1803DF ST1803DFX ST1803DHI, equivalent: 1802DFX MD1802DFX ST1802DFX.
6 RON
SI-D 1000V 1A/50App DO41G. Cross Reference: 1N4007G 1N4007GP 1N4007GP-E3/73.
0.20 RON
SI-D 1000V 1A/35Ap 300ns DO41.
0.15 RON
Si-N 140V 10A 100W 15MHZ TO3P original Korea Electronic Corp. ref. D1047 K-D1047 equivalent: 2SC3284 2SC4466 2SD1063 2SD1148 C3284 C4466 D1063 D1148.
6 RON
IGBT-N + Dioda 600V 40A 290W TO247. Cross Reference: FGH40N60SFD FGH40N60SFDTU FGH40N60SMDF FGH40N60SMD ( FGH40N60UF fara dioda ! ) FGH40N60UFD H40N60 H40N60UFD ( SGH40N60UF fara dioda...
20 RON
Dioda SI-D 100V 0, 2A 4nS DO35. Equivalent 1N4448.
0.10 RON
Si-P 160V 0.6A 0.31W TO92.
0.20 RON
Si-N 60V 0, 15A 0, 4W 80MHZ. Cross Reference: 2SC1815GR C1815GR.
0.20 RON
Si-N 160V 1.5A 1W 140MHZ TO126. Cross Reference: D669A.
2 RON
Si-P/Si-N 230V 15A 150W TOP3L, imperecheati pe criteriul caracteristici/parametri identici, originali Toshiba. Cross Reference: A1943 C5200.
20 RON
N-FET 600V 9.5A 50W TO220F. Cross Reference: 10N60C FQPF10N60 FQPF10N60CF.
4 RON
Si-N 180V 0, 6A 0, 31W TO92.
0.20 RON
Si-N 30V 2A 15W 260Mhz TO126. Cross Reference: C3807, equivalent: DA3807.
1.20 RON
Si-N 160V 1A 100MHz TO92m equivalent: 2SC2383 2SC2383-O 2SC2383Y. Cross Reference: C2383 C2383-O C2383-Y.
0.50 RON
IGBT 360V 200A TO263 D2PAK, Panasonic. Cross Reference: B1JBDN000004 GT30F131.
12 RON
Si-N 120V 1A 0, 3W 100MHz TO92M. Cross Reference: TC-SC2240-GR.
1 RON
Si-N+Di+R 1500V 5A 50W TO3P. Cross Reference: 3DD1555 D1555.
4 RON
SI-D 1000V 3A <50NS DO201AD Ultra Fast Recovery Diode, equivalent: BYT13-1000 BYT56M FU5408 FUF5408.
0.60 RON
Punte redresoare 1000V 50A (400App) ref. HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER.
8 RON
Si-N 1200V 6A (10App) 32W 0.3uS TO220F. Cross Reference: BUT11 BUT11A BUT11AF BUT11AP original NXP-Philips.
4 RON
SI-P 180V 1, 5A 20W 140MHZ TO126, equivalent: 1SB649A 2SB649 2SB649AC 2SB649AB B649.
2 RON
Ultrafast Dual Common Cathod Diode 300V 2X30A 55nS TO247, equivalent: 60CPH03 VS-60CPH03PBF STTH6003.
18 RON
Si-N 120V 8A 80W 12MHz TO3P equivalent for: 2SC2579 2SD588 2SD716 AZC1844 C2579 D588 D716. Cross Reference: D718 KTD718 Samsung - Korea Electronic Corporation. Complementary pair 2SB688 B688.
6 RON
Dual N/P MOSFET Transistor Complementary Enhancement Mode Field Effect, excellent RDS on and low gate charge VDS V = 30V -30V ID = 6.9A VGS=10V -6A VGS=-10V Pd: 1, 44W. Cross Reference: 4606 4606G...
3 RON
Si-N 230V 15A 150W 30MHZ TOP3L original Toshiba. Cross Reference: C5200, equivalent 2SC4029 C4029.
6 RON
N-FET 600V 7.5A 48W RDS-ON 1R2 TO220F, equivalent for 2SK3667 8N60C FQPF8N60.
4 RON
Si-P 120V 1A 0, 9W 140MHz TO92MOD. Cross Reference: 647 B647, equivalent: 2SA965 A965.
1 RON
Si-P 120V 8A 80W 10MHZ TO3P equivalent: 2SA1104 2SB617 2SB618 2SB863 A1104 B617 B618 B863. Cross Reference: B688.
6 RON
Si-N 80V 8A 15W 30/445nS Icm pulsed: 11A t-off: 25ns t-on: 30ns ft: 330MHz hFE max: 560 hFE min: 200 TO251AA I-pak. Cross Reference: C5707.
1.50 RON
Si-N 120V 1A 0, 9W 140Mhz TO92. Cross Reference: 2SD667C D667 D667A D667AC D667C, equivalent: 2SC2235 C2235.
1 RON
Si-N 1500/700V 8A 50W 7MHz Issowatt-218.
5 RON
N-FET 600V 6A 32W 2, 2R TO220-ISO, equivalent P6NK60ZFP STM.
4 RON
SI-P / Si-N Pair 120V 0.1A 100MHz 0, 3W TO92. Cross Reference: A970 C2240.
3 RON
N-FET 600V 10A RDS(on) = 0.55Ω 49W TO220F. Cross Reference: 10N60 10N60LV FDPF10N60L MDF10N60L MDF10N60LV UTC10N60 UTC10N60L.
6 RON
SI-Di Fast Recovery Diode 1000V 2A (75App) 500nS DO15 case. Cross Reference: BY299 FR201 FR202 FR203 FR204 FR205 FR206 FR207G RL201 RL202 RL203 RL204 RL205 RL206 RL207G.
0.50 RON
IGBT-N High Speed Power Switching 360V 35A (250App) 60W Tf<150ns TO263. Genuine Panasonic Parts B1JBEN000004 for X-Sustain Board Panasonic model: TNPA5331 TNPA5330 TNPA5335.
12 RON
Si-P/Si-N Pair 180V 15A 130W. Cross Reference: A1492 C3856 Sanken Original.
22 RON
SI-P 50V 0.15A 0.4W 80MHz TO92. Cross Reference: A1015GR.
0.15 RON
Dioda Zenner 0, 5W 3V3 DO35 equiv. 1N3396, 1N3506, 1N4620, 1N5226, 1N5226A, 1N5226B, 1N5226C, 1N5518, 1N5518A, 1N5518B, 1N5842, 1N5842A, 1N5842B, 1N5988, 1N5988A, 1N746, 1N746A, AZ3.3, AZ746, AZ746A,...
0.10 RON
SI-N+Di+R Darlington 1400V 8A 62W 0, 15uS Rbe=150Ω ±20%, equivalent: BU808-D BU808D BU808DF BU808DFI 2SC5388 C5388.
12 RON
N-FET 55V 60A 110W TO252A DPAK. Cross Reference: IRLR2905 IRLR2905Z LR2905 LR2905Z.
3 RON
N-FET 75V 80A 300W TO220AB. Cross Reference: P75NF75 P75NF75& P75NF758 STP75N75 STP75NF75.
3 RON
N-FET 500V 8A 125W 0R85 TO220AB.
3 RON