Tranzistori & diode
Si-N+Di 1500V 6A 50W original Toshiba equivalent: 2SC4764. Cross Reference: 3DD2499 D2499.
4 RON
Schottky Si-D 100V 5A DO201AD, equivalent: MBR5100 MBR5100RLG SB5B0 SB5100 SR5100.
1.20 RON
SI-N+Di+R Darlington 1400V 8A 62W 0, 15uS Rbe=100-115Ω, equivalent: BU808D BU808DF BU808DFI 2SD1632-Matsushita. High performance transistor for horizontal deflection output.
12 RON
Si-N+Di+R 1500V 10A 50W 0, 3uS ISOWATT-218FX. Cross Reference: 1803DFX 1803DHI MD1803DF ST1803DFX ST1803DHI, equivalent: 1802DFX MD1802DFX ST1802DFX.
6 RON
Si-P 160V 1A 0, 9W 50MHz TO92S. Cross Reference: 2SA1013-O 2SA1013Y A1013-Y CS-A1013Y.
0.30 RON
Si-N 140V 10A 100W 15MHZ TO3P original Korea Electronic Corp. ref. D1047 K-D1047 equivalent: 2SC3284 2SC4466 2SD1063 2SD1148 C3284 C4466 D1063 D1148.
6 RON
IGBT-N + Dioda 600V 40A 290W TO247. Cross Reference: FGH40N60SFD FGH40N60SFDTU FGH40N60SMDF FGH40N60SMD ( FGH40N60UF fara dioda ! ) FGH40N60UFD H40N60 H40N60UFD ( SGH40N60UF fara dioda ! )...
20 RON
Si-P/Si-N 230V 15A 150W TOP3L, imperecheati pe criteriul caracteristici/parametri identici, originali Toshiba. Cross Reference: A1943 C5200.
18 RON
N-FET 600V 9.5A 50W TO220F. Cross Reference: 10N60C FQPF10N60 FQPF10N60CF.
4 RON
Si-N 160V 1A 100MHz TO92m equivalent: 2SC2383 2SC2383-O 2SC2383Y. Cross Reference: C2383 C2383-O C2383-Y.
0.50 RON
SI-D 1000V 3A <50NS DO201AD Ultra Fast Recovery Diode, equivalent: BYT13-1000 BYT56M FU5408 FUF5408.
0.60 RON
IGBT 360V 200A TO263 D2PAK, Panasonic. Cross Reference: B1JBDN000004 GT30F131.
12 RON
Si-N 1200V 6A (10App) 32W 0.3uS TO220F. Cross Reference: BUT11 BUT11A BUT11AF BUT11AP original NXP-Philips.
4 RON
SI-P 180V 1, 5A 20W 140MHZ TO126, equivalent: 1SB649A 2SB649 2SB649AC 2SB649AB B649.
2 RON
Ultrafast Diode 300V 2X30A 55nS TO247, equivalent: 60CPH03 VS-60CPH03PBF STTH6003.
18 RON
Punte redresoare 1000V 50A (400App) ref. HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER.
8 RON
Dual N/P MOSFET Transistor Complementary Enhancement Mode Field Effect, excellent RDS on and low gate charge VDS V = 30V -30V ID = 6.9A VGS=10V -6A VGS=-10V Pd: 1, 44W. Cross Reference: 4606 4606G...
3 RON
Si-N 80V 8A 15W 30/445nS Icm pulsed: 11A t-off: 25ns t-on: 30ns ft: 330MHz hFE max: 560 hFE min: 200 TO251AA I-pak. Cross Reference: C5707.
1.50 RON
N-FET 600V 7.5A 48W RDS-ON 1R2 TO220F, equivalent for 2SK3667 8N60C FQPF8N60.
4 RON
N-FET 600V 10A RDS(on) = 0.55Ω 49W TO220F. Cross Reference: 10N60 10N60LV FDPF10N60L MDF10N60L MDF10N60LV UTC10N60 UTC10N60L.
6 RON
Si-P 120V 1A 0, 9W 140MHz TO92MOD. Cross Reference: 647 B647, equivalent: 2SA965 A965.
1 RON
Si-N 120V 8A 80W 12MHz TO3P equivalent for: 2SC2579 2SD588 2SD716 AZC1844 C2579 D588 D716. Cross Reference: D718 KTD718 Samsung - Korea Electronic Corporation. Complementary pair 2SB688 B688.
6 RON
N/P-Channel Enhancement Mode Field Effect Transistor +30/-30V +7A/-6A 2W SOP8, equivalent: STM8309 STM.
4 RON
Si-N 230V 15A 150W 30MHZ TOP3L original Toshiba. Cross Reference: C5200, equivalent 2SC4029 C4029.
6 RON
Si-P 120V 8A 80W 10MHZ TO3P equivalent: 2SA1104 2SB617 2SB618 2SB863 A1104 B617 B618 B863. Cross Reference: B688.
6 RON
Si-N 120V 1A 0, 9W 140Mhz TO92. Cross Reference: 2SD667C D667, equivalent: 2SC2235 C2235.
1 RON
IGBT-N High Speed Power Switching 360V 35A (250App) 60W Tf<150ns TO263. Genuine Panasonic Parts B1JBEN000004 for X-Sustain Board Panasonic model: TNPA5331 TNPA5330 TNPA5335.
14 RON
Si-P/Si-N Pair 180V 15A 130W. Cross Reference: A1492 C3856 Sanken Original.
24 RON
Si N-DARL/P-DARL Pair 160V 10A 150W 55MHz, equivalent: MN2488O/MP1620O MN2488P/MP1620P MN2488Y/MP1620Y MN2488OPY/MP1620OPY.
36 RON
Dioda Zenner 0, 5W 3V3 DO35 equiv. 1N3396, 1N3506, 1N4620, 1N5226, 1N5226A, 1N5226B, 1N5226C, 1N5518, 1N5518A, 1N5518B, 1N5842, 1N5842A, 1N5842B, 1N5988, 1N5988A, 1N746, 1N746A, AZ3.3, AZ746, AZ746A,...
0.10 RON
N-FET 55V 60A 110W TO252A DPAK. Cross Reference: IRLR2905 IRLR2905Z LR2905 LR2905Z.
3 RON
N-FET 75V 80A 300W TO220AB. Cross Reference: P75NF75 P75NF75& P75NF758 STP75N75 STP75NF75.
3 RON
