G60N100 / W60N100 FSC/TSC
Description
NPT Trench IGBT Anti-Parallel Diode 1000V 60A (200A pulse) 208W UGE(th)=2,2V td(on)=210nS td(off)=1350nS TO264, Original High Quality. Cross Reference: 60N100 60N100CN FGL60N100 FGL60N100AND FGL60N100BNTD FGL60N100BNTDTU G60N100 H60N100-A IKW60N100 IXSH60N100A SH60N100 SGW60N100 TS-G60N100CE TSG60N100CE Taiwan SemiConductor. Equivalent / Replacement for: G50N60 SGL50N60RUFD W50N60 600V 50A 250W.
Equivalent / Similar / Replacement for G40N120 / W40N120 - IGBT N-Channel with Anti-Parallel Diode 1200V 64A (120A pulse) 208W UGE(th)=2,2V td(on)=41nS td(off)=200nS TO264, NPT Power Trench Transistor, Original High Quality. Cross Reference: 40N120 40N120CN FGH40N120 FGL40N120 FGL40N120AND FQL40N120 G40N120 H40N120 IKW40N120 IXEH40N120 IXSH40N120-A TS-G40N120CE TSG40N120CE.