50N322 / GT50N322 Toshiba

RON 26.00
Preturile afisate sunt finale, stocurile reale. Taxa de procesare si expediere este invers proportionala cu valoarea comenzii.
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Description

Insulated Gate Bipolar Transistor Silicon N Channel IGBT 1000V 60A (120App) 160W TO218. Cross Reference: 50N322A GT50N322 GT50N322A.