50JR22 / GT50JR22 Toshiba®

RON 28.00
Preturile afisate sunt finale (neplatitor de TVA), stocurile reale.
Stock 10
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IGBT-N + FWD Diode 600V 50A 100App 230W High-speed switching: tf =0.05uS (IC=50A) trr=0.35uS (IF=15A). Dedicated to Current-Resonant Inverter Switching Applications. 100% Original Transistor, Made in Japan by Toshiba Corporation.